Advanced Electronic Materials & Devices (AEMD) Research Group

Our research group specializes in the design and engineering of dielectric materials and heterointerfaces for next-generation neuromorphic computing and memory applications. We develop thin-film devices from a diverse category of material systems—including metal oxides (e.g., HfO₂, WO₃, VO₂), perovskites, and two-dimensional (2D) materials—fabricated into capacitive and metal-oxide-semiconductor (MOS) structures. A core objective is the integration of these devices into crossbar arrays, whose neuromorphic computing characteristics we rigorously investigate through experimental and computational approaches.
A complementary research thrust is the discovery and development of novel ferroelectric, relaxor, and antiferroelectric materials. We seek to elucidate their fundamental properties and evaluate their performance in non-volatile ferroelectric memory (FeRAM) and high-energy-density capacitors. Furthermore, we advance the development of piezoelectric material systems for high-sensitivity sensor and high-efficiency actuator applications.